MRF1150MB

MRF1150MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1150MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: • Class B and C Operation • Common Base • PG = 7.8 dB at 150 W/1090 MHz • Omnigold™ Metalization System ØB B C E B ØC D MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O E F 12 A 70 V 583 W @ TC = 25°C -65 C to +200 °C -65 C to +150 °C 0.3 C/W O DIM A B C D E F .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICBO hFE PG ηC IC = 50 mA IC = 50 mA IE = 5.0 mA VCB = 50 V VCE = 5.0 V VCC = 50 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 70 70 4.0 10 UNITS V V V mA --- IC = 5.0 A POUT = 150 W f = 1090 MHz 10 7.8 35 9.8 40 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 ERROR! REFERENCE SOURCE NOT FOUND. MRF1150MB IMPEDANCE DATA Freq 960 MHz 900 MHz 870 MHz 800 MHz ZIN(Ω) 3.8 – j3.8 7.6 – j3.4 9.4 – j2.6 10.8 + j1.0 ZCL(Ω) 4.9 + j2.0 5.0 + j0.4 4.3 + j.06 4.3 + j0.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2