MRF136

MRF136 RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz. PACKAGE STYLE .380 4L FLG MAXIMUM RATINGS ID VDSS PDISS TJ TSTG θJC 2.5 A 65 V 50 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.6 °C/W 1 = DRAIN 2 = GATE 3 & 4 = SOURCE CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps η TC = 25 °C TEST CONDITIONS ID = 5.0 mA VDS = 28 V VDS = 0 V ID = 25 mA ID = 250 mA VDS = 28 V VGS = 0 V VGS = 0 V VGS = 40 V VDS = 10 V VDS = 10 V VGS = 0 V f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 2.0 1.0 1.0 250 3.0 400 24 25 5.5 1.0 12 50 16 60 6.0 UNITS V mA µA V mmhos pF VDS = 28 V VDD = 28 V IDQ = 25 mA VDD = 28 V IDQ = 25 mA ID = 0.5 A Pout = 15 W f = 150 MHz f = 150 MHz dB dB % ψ Pout = 15 W f = 150 MHz VSWR 30:1 @ ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1