MRF137

MRF137 RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz. PACKAGE STYLE MAXIMUM RATINGS ID VDSS PDISS TJ TSTG θJC 5.0 A 65 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W 1 = DRAIN 2 = GATE 3 & 4 = SOURCE CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps η ID = 10 mA VDS = 28 V VDS = 0 V ID = 25 mA TC = 25 °C TEST CONDITIONS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VDS = 10 V VGS = 0 V f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 4.0 1.0 1.0 500 3.0 750 48 6.0 UNITS V mA µA V mmhos ID = 500 mA VDS = 28 V 45 11 1.5 12 50 16 60 NO DEGRADATION IN OUTPUT POWER pF VDS = 28 V VDD = 28 V IDQ = 25 mA VDD = 28 V IDQ = 25 mA ID = 1.0 A Pout = 30 W f = 150 MHz f = 150 MHz dB dB % ψ Pout = 30 W f = 150 MHz VSWR 30:1 @ ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1