MRF137
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz.
PACKAGE STYLE
MAXIMUM RATINGS
ID VDSS PDISS TJ TSTG θJC 5.0 A 65 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W
1 = DRAIN 2 = GATE 3 & 4 = SOURCE
CHARACTERISTICS
SYMBOL
V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps η ID = 10 mA VDS = 28 V VDS = 0 V ID = 25 mA
TC = 25 °C
TEST CONDITIONS
VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VDS = 10 V VGS = 0 V f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65 4.0 1.0 1.0 500 3.0 750 48 6.0
UNITS
V mA µA V mmhos
ID = 500 mA VDS = 28 V
45 11 1.5 12 50 16 60
NO DEGRADATION IN OUTPUT POWER
pF
VDS = 28 V VDD = 28 V IDQ = 25 mA VDD = 28 V IDQ = 25 mA
ID = 1.0 A Pout = 30 W
f = 150 MHz f = 150 MHz
dB dB %
ψ
Pout = 30 W f = 150 MHz VSWR 30:1 @ ALL PHASE ANGLES
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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