MRF141G

MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG θJC O O 32 A 65 V ±40 V 500 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 0.35 C/W O O O O 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE CHARACTERISTICS / EACH SIDE SYMBOL BVDSS IDSS IGSS VGS(th) VDS(on) gfs Ciss Coss Crss G ps push-pull η push-pull ψ push-pull VDS = 28 V VDS = 0 V ID = 100 mA ID = 10 A ID = 5.0 A VDS = 28 V VDD = 28 V ID = 100 mA VGS = 0 V TC = 25 C O NONE TEST CONDITIONS MINIMUM 65 TYPICAL MAXIMUM 5.0 1.0 UNITS V mA µA V V mhos VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V IDQ = 500 mA f = 1.0 MHz 12 45 5.0 350 420 40 1.0 5.0 1.5 pF dB % Pout = 300 W f = 175 MHz VDD = 28 V ID(max) = 21.4 A Pout = 300 W f = 175 MHz VDD = 28 V IDQ = 500 mA Pout = 300 W f = 175 MHz VSWR = 5:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1