MRF150

MRF150 SILICON RF POWER MOSFET DESCRIPTION: The MRF150 is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L S D Ø.125 NOM. C B MAXIMUM RATINGS H G E D G F S ID VDSS VGS PDISS TJ TSTG θJC 16 A 125 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 10 C/W O O O O O O DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm IJ K MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss Gps η ψ TC = 25 C O TEST CONDITIONS ID = 100 mA VDSS = 50 V VGS = 20 V VDS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VDS = 0 V ID = 100 mA ID = 100 mA MINIMUM TYPICAL MAXIMUM 125 5.0 1.0 1.0 4 350 250 50 45 17.0 50 5.0 UNITS V mA µA V mho VDS = 50 V VGS = 0 V f = 1.0 MHz pF VDD = 50 V IDQ = 250 mA Pout = 150 W (PEP) Fo = 30 & 30.001 MHz VSWR = 30:1 AT ALL PHASE ANGLES dB % NO DEGRADRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1