MRF160

MRF160 POWE FIELD EFFECT TRANSISTOR DESCRIPTION: The MRF160 is an EnhancementMode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz. PACKAGE STYLE .280 4L PILL MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG θJC 0.5 mA 65 V ±40 V 8.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 13.2 °C/W Style 3 CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss NF Gps η ψ TC = 25 °C NONE TEST CONDITIONS ID = 5.0 mA VDSS = 28 V VGS = 40 V VDS = 10 V VDS = 10 V VDS = 28 V VGS = 0 V VGS = 0 V VDS = 0 V ID = 10 mA ID = 100 mA VGS = 0 V f = 1.0 MHz MINIMUM 65 TYPICAL MAXIMUM 0.5 1.0 UNITS V mA µA V mmhos 1.0 50 3.0 4.2 0.45 3.0 16 45 20 55 6.0 pF dB dB % VDS = 28 V ID = 100 mA f = 400 MHz ZL = 14.5+j = 25.7 ZS = 67.7+j = 14.1 VDD = 28 V Pout = 2.0 W IDQ = 100 mA f = 400 MHz IDQ = 100 mA VDD = 28 V VSWR = 30:1 at all phase angles Pout = 2.0 W f = 400 MHz NO DEGRADRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1