MRF175GV

MRF175GV RF POWER FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz. PACKAGE STYLE MAXIMUM RATINGS ID VDSS PDISS TJ TSTG θJC O O 26 A 65 V 400 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.44 C/W O O O O 1 = DRAIN 2 = DRAIN(2) 3 = GATE(1) 4 = GATE(2) 5 = SOURCE (1&2) -CASE CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) VDS(on) gfs Ciss Coss Crss Gps η ψ ID = 50 mA VDS = 28 V VDS = 0 V TC = 25 C O NONE TEST CONDITIONS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 2.5 1.0 1.0 2.0 3.0 3.0 180 200 20 12 55 10:1 14 65 --6.0 1.5 UNITS V mA µA V V mhos pF ID =100 mA ID = 5.0 A ID = 2.5 A VDS = 28 V VDD = 28 V IDQ = 2 X 100 mA POUT = 200 W f = 225 MHz dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1