MRF182

MRF182 RF POWER FET TRANSISTOR DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. PACKAGE STYLE .350 2L FLG FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold™ Metalization System • High Gain, Rugged device. MAXIMUM RATINGS VDSS VGS PD TJ TSTG θJC 65 V ±20 V 74 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(th) VGS(Q) VDS(on) gfs Ciss Coss Crss GPS η ID = 1.0 µA VDS = 28 V VDS = 0 V VDS = 10 V VDS = 28 V VGS = 10 V VDS = 10 V VDS = 28 V TC = 25 °C NONE TEST CONDITIONS VGS = 0 V VGS = 20 V ID = 100 µA ID = 50 mA ID = 3.0 A ID = 3.0 A VGS = 0 V POUT = 30 W f = 1.0 MHz f = 945 MHz MINIMUM 65 TYPICAL MAXIMUM UNITS 1.0 1.0 4.0 5.0 1.2 V µA µA V V V S pF dB % 2.0 3.0 1.6 3.0 4.0 0.9 1.8 56 28 2.5 VDD = 28 V IDQ = 50 mA 11 50 14 58 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1