MRF185

MRF185 RF POWER MOSFET DESCRIPTION: The ASI MRF185 is a Silicon Nchannel enhancement mode lateral MOSFET. PACKAGE STYLE .385X.850 4LFG FEATURES: • High Gain, Rigged Device • Omnigold™ Metalization System MAXIMUM RATINGS VDS VGS PDISS TJ TSTG θJC 65 V ±15 V 250 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.7 °C/W 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE CHARACTERISTICS SYMBOL BVDSS IDSS IGSS ∆VGS(Q) VDS(on) gfs Coss Crss GPS ηD ID = 1.0 µA VDS = 28 V VDS = 0 V TC = 25 °C TEST CONDITIONS VGS = 0 V VGS = 20 V VDS = 26 V VGS = 3 V VDS = 10 V VGS = 0 V Pout = 85 W f = 1.0 MHz f = 960 MHz MINIMUM 65 TYPICAL MAXIMUM 1.0 1.0 UNITS V µA µA V V S ID = 300 mA ID = 3.0 A ID = 3.0 A VDS = 28 V VDS = 28 V 0.15 0.75 1.6 38 4.6 11 45 14 53 0.3 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1