MRF1946A

MRF1946A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. PACKAGE STYLE .380" 4L STUD .112x45° A FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W B C E ØC E B H I J MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC 8.0 A 16 V 36 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G H I J D #8-32 UNC-2A F E G M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE Cob GPE η ψ IC = 25 mA IC = 25 mA IE = 5.0 mA VCE = 15 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 16 4.0 5.0 UNITS V V V mA --pF DB % VCE = 5.0 V VCB = 15 V VCC = 12.5 V VCC = 15.5 V IC = 1.0 A f = 1.0 MHz Pout = 30 W f = 175 MHz 40 75 75 150 100 10 60 11 70 No Degradation in Power Output PIN = 2.0 dB Overdrive Load VSWR = 30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1