MRF313

MRF313 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. PACKAGE STYLE .200" 4L PILL FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O 150 mA 40 V 30 V 3.0 V 6.1 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 28.5 C/W O O O O CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO hFE COB PG ηC IC = 10 mA TC = 25 C O NONETEST CONDITIONS IC = 0.1 mA IE = 1.0 mA VE = 20 V VCE = 10 V VCB = 28 V IC = 100 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 30 35 3.0 1.0 20 3.5 15 16 45 150 5.0 UNITS V V V mA --pF dB % VCC = 28 V POUT = 1.0 W f = 400 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1