MRF314

MRF314 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF314 is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • W ithstands 30:1 Load VSWR • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.4 A 65 V 35 V 4.0 V 82 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.13 °C/W ORDER CODE: ASI10872 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC ψ IC = 30 mA IC = 30 mA IE = 3.0 mA VE = 30 V VCE = 5.0 V VCB = 30 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 65 4.0 3.0 UNITS V V V mA --pF dB % IC = 1.5 A f = 1.0 MHz 20 30 10 50 13.5 80 40 VCC = 28 V POUT = 30 W f = 150 MHz 30:1 all phase angles, no degadation in output. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1