MRF314A

MRF314A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF314A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • PG = 10 dB min. at 30 W/ 150 MHz • W ithstands 30:1 Load VSWR • Omnigold™ Metalization System B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O D 4.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.9 C/W O O O O DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10770 O CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC ψ TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V IC = 200 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 5 --50 10 50 13.5 60 UNITS V V V mA --pF dB % VCC = 28 V POUT = 30 W f = 150 MHz 30:1 minimum without degration in output power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1