MRF316

MRF316 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF316 is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .500 6L FLG C A FEATURES: • PG = 10 dB min. at 80 W/ 150 MHz • W ithstands 30:1 Load VSWR • Omnigold™ Metalization System D E C E 2x ØN FU LL R E B G B E E .725/18,42 F K H J I L M AX IM U M inche s / m m M MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O 20 A 65 V 36 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 C/W O O O O D IM A B C D E F G H I J K L M N M IN IM U M inche s / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 ORDER CODE: ASI10771 O CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG ηC Ψ TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 5.0 V VCB = 28 V IC = 5.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 15 20 200 250 10.0 55 13.0 60 UNITS V V V mA --pF dB % VCE = 28 V POUT = 80 W f = 175 MHz 30:1 minimum without degation in output power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1