MRF317

MRF317 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF317 is Designed for Class C, 28 V High Band Applications up to 200 MHz. PACKAGE STYLE .500 6L FLG C A 3 1 2x Ø N F U LL R FEATURES: D • Internal Input Matching Network • PG = 9.0 dB at 100 W/150 MHz • Omnigold™ Metalization System 2 B G .725/18,42 F 4 E MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 20 A 65 V 36 V 65 V 4.0 V 270 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.65 °C/W D IM A B C D E F G H I J K L M N K H M IN IM U M inches / m m M L J I M A XIM U M inches / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 1 = Collector 2 = Base 3&4 = Emitter CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 100 W IC = 5.0 A f = 1.0 MHz f = 150 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 5.0 10 80 250 9.0 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1