MRF323

MRF323 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF323 is Designed for Wide Band Large-Signal Driver and Predriver Applications in the 200 to 500 MHz Range. PACKAGE STYLE .280" 4L STUD A 45° C B E B E FEATURES INCLUDE: • Gold Metalization • 30:1 VSWR E F D C J I G MAXIMUM RATINGS IC VCB PDISS TSTG θJC O H K DIM A B C D E MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 2.2 A (CONT) 3.0 A (PEAK) 60 V 55 W @ TC = 25 C -65 C to +150 C 3.2 C/W O O O 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 F G H I J K .255 / 6.48 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE Cob GPE η ψ IC = 20 mA IC = 20 mA IC = 20 mA IE = 2.0 mA VCB = 30 V IC = 1.0 A VCB = 28 V VCC = 28 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 60 33 4.0 2.0 UNITS V V V V mA --pF dB % VCE = 5.0 V f = 1.0 MHz Pout = 20 W f = 400 MHz f = 400 MHz 20 20 10 50 11 60 80 24 Pout = 20 W VCC = 28 V VSWR = 30:1 ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1