MRF329

MRF329 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF329 is Designed for Wide Band Large-Signal Output and Driver Amplifier Stages in the 100-500 MHz Frequency Range. PACKAGE STYLE .400X.425" 6L FLG. FEATURES INCLUDE: • Gold Metalization • 3:1 VSWR • I/O Network Matching MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O 9.0 A (CONT) 12.0 A (PEAK) 60 V 270 W @ TC = 25 C -65 C to +150 C -65 C to +150 C 0.65 C/W O O O O 1 & 3 = EMITTER 2 = COLLECTOR 4 = BASE CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE Cob GPE η ψ IC = 80 mA IC = 80 mA IC = 80 mA IE = 8.0 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V VCC = 28 V VSWR = 3:1 TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 60 30 4.0 5.0 UNITS V V V V mA --pF dB % IC = 4.0 A f = 1.0 MHz Pout = 100 W Pout = 100 W ALL PHASE ANGLES 20 95 7.0 50 9.7 60 80 125 f = 400 MHz f = 400 MHz NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1