MRF338

MRF338 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF338 is Designed for High Power Amplifiers in 400 to 512 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG C A 2x ØN FU LL R D FEATURES: • PG = 8.8 dB Typical at 470 MHz • Internal Input Matching Network • Omnigold™ Metalization System B G .725/18,42 F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 12 A 60 V 30 V 4.0 V 250 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.7 °C/W D IM A B C D E F G H I J K L M N K H M IN IM U M inche s / m m M L J I M AX IM U M inche s / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG ηD IC = 50 mA IE = 8.0 mA VCE = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V TC = 25 C O NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 60 30 4.0 5.0 UNITS V V V mA --pF dB % IC = 4.0 A f = 1.0 MHz POUT = 80 W f = 470 MHz 20 95 7.3 50 8.8 60 80 125 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1