MRF421

MRF421 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF421 is Designed for High linear amplifier applications from 2.0 to 30 MHZ. PACKAGE STYLE .500 4L FLG .112x45° A FULL R Ø.125 NOM. L FEATURES: • PG = 12 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System C B E D G F K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20 A DIM H IJ MINIMUM inches / mm MAXIMUM inches / mm 45 V 20 V 3.0 V 290 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10824 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES hFE COB GP IMD3 ηC IC = 50 mA TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 16 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V VCE = 12.5 V ICQ = 150 mA ICQ = 150 mA IC = 5.0 A f = 1.0 MHz f = 30 MHz POUT = 100 W MINIMUM TYPICAL MAXIMUM 20 45 45 4.0 10 10 650 10 40 12 -30 200 UNITS V V V V mA --pF dB dBc % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1