MRF426

MRF426 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF426 is Designed for high gain amplifier applications up to 30 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 22 dB min. at 25 W/30 MHz • IMD3 = -30 dBc max. at 25 W(PEP) • Omnigold™ Metalization System • Available as matched pairs. E C Ø.125 NOM. FULL R J .125 B C D F E E G HI MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE COB GP ηC IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VCE = 28 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 35 4.0 10 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 30 V VCE = 28 V IC = 1.0 A f = 1.0 MHz POUT = 25 W (PEP) f = 30 MHz 10 200 80 22 35 -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 MRF426 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2