MRF428

MRF428 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF428 is Designed for high voltage applications up to 30 MHz PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = -30 dBc max. at 150 W (PEP) • Omnigold™ Metalization System E C Ø.125 NOM. C B B D G F E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O IJ K 10 A 110 V 55 V 4.0 V 233 W @ TC = 25 °C -65 C to +200 °C -65 C to +150 °C 0.75 °C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICEO ICES hFE Cob GP IMD3 ηC TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 60 V VCE = 6.0 V VCB = 50 V IC = 1.4 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 110 110 55 4.0 5.0 5.0 18 43.5 200 14 UNITS V V V V mA mA --pF dB dBc % VCE = 50 V ICQ = 100 mA POUT = 150 W (PEP) f = 30 MHz 37 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1