MRF5175

MRF5175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A 45° C FEATURES: • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System B E B D C E J E F I MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 1.0 A DIM MINIMUM inches / mm G H K #8-32 UNC MAXIMUM inches / mm 60 V 33 V 1 2 W @ TC = 2 5 C -65 OC to +200 OC -65 C to +150 C 12 C/W O O O O A B C D E F G H I J K 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηD IC = 30 mA IC = 30 mA IE = 1.0 mA VCB = 30 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 33 60 4.0 0.5 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 30 V VCC = 28 V IC = 250 mA f = 1.0 MHz POUT = 5.0 W f = 400 MHz 10 100 15 11 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1