MRF5176

MRF5176 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD FEATURES: 45° A • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System C B E B D C E J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 2.0 A 60 V 33 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 6.0 °C/W DIM A B C D E F G H I J K F E I G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICBO hFE COB PG ηD IC = 50 mA IC = 50 mA IE = 5.0 mA VCB = 30 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 33 4.0 1.0 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 30 V VCC = 28 V IC = 500 mA f = 1.0 MHz POUT = 15 W f = 400 MHz 10 100 25 10 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1