MRF553

MRF553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. PACKAGE STYLE MILLIMETERS MIN MAX 4.45 5.21 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.73 0.20 0.31 7.24 8.13 1.65 3.25 0.64 1.02 INCHES MIN MAX .175 .205 .075 .100 .033 .039 .097 .104 .348 .383 .008 0.12 .285 .320 0.65 0.128 .025 0.40 FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 % (Typ) DIM A B C D E F G H J K MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 500 mA 36 V 3.0 W @ TC = 75 °C -65 °C to +200 °C -65 °C to +150 °C 41.7 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVCES BVEBO ICES hFE CCB GPE η ψ IC = 10 mA TC = 25 °C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 15 V VCE = 5.0 V VCB = 10 V VCE = 12 V POUT = 1.5 W IC = 250 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 16 36 36 4.0 5.0 30 12 11.5 50 10:1 13 60 200 20 UNITS V V V V mA --pF dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1