MRF581

MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG 200 mA 36 V 18 V 2.5 V 2.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO IEBO ICBO hFE Ccb GP TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 1.0 mA IE = 100 µA VEB = 2.0 V VCB = 15 V VCE = 5.0 V VCB = 10 V VCC = 10 V IC = 50 IC = 50 mA f = 1.0 MHz f = 0.5 GHz MINIMUM TYPICAL MAXIMUM 36 18 2.5 100 100 50 1.4 13 15.5 200 2.0 UNITS V V V µA µA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1