MRF5812

MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. PACKAGE STYLE SO-8 FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE COB FTAU NFmin GNF GU max MSG 2 |S21| TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 0.1 mA VCB = 15 V VCE = 2.0 V VCE = 5.0 V VCB = 10 V VCE = 10 V IC = 75 mA IC = 50 mA f = 1.0 MHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 30 15 2.5 0.1 0.1 50 1.4 5.0 2.0 13 3.0 200 2.0 UNITS V V V mA mA --pF GHz dB % dB dB dB VCE = 10 V IC = 50 mA f = 500 MHz 15.5 17.8 20 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1