MRF587

MRF587 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. PACKAGE STYLE .280 4L STUD A 45° 1 B 2 4 3 FEATURES: • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure • Diffused Ballast Resistors • Omnigold™ Metalization System DIM D E F G C J I H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG 200 mA 34 V 17 V 2.5 V 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C A B C D E F G H I J K 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 Lead 1 = Collector 2 & 3 = Emitter 4 = Base CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Ccb GP ηC TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 100 µA VCB = 10 V VCE = 5.0 V VCB = 10 V IC = 50 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 34 17 2.5 50 50 1.7 11 200 2.2 UNITS V V V µA --pF dB % VCC = 15 V IC = 90 mA f = 0.3 GHz 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1