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MRF652S

MRF652S

  • 厂商:

    ASI

  • 封装:

  • 描述:

    MRF652S - NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
MRF652S 数据手册
MRF652S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold™ Metalization System E C ØB B E ØC MAXIMUM RATINGS IC VCBO VCER VEBO PDISS TJ TSTG θJC 2.0 A 36 V 16 V 4.0 V 25 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 200 °C/W DIM A B C D E F .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 MINIMUM inches / mm D E F MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES hFE Cob PG ηC IC = 25 mA IC = 25 mA IC = 25 mA IE = 5.0 mA VCE = 15 V VCE = 5.0 V VCB = 15 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 36 4.0 1.0 UNITS V V V V mA --pF dB % IC = 200 mA f = 1.0 MHz POUT = 5.0 W f = 512 MHz 10 9.5 10 60 11 65 150 15 VCC = 12.5 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1
MRF652S 价格&库存

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