MRF890_07

MRF890 NPN SILICON RF POWER TRANSISTOR E DESCRIPTION: The ASI MRF890 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .205 4L STUD D 2 1 3 C A FEATURES: • Pg = 9.0 dB min. @ 900 MHz • P1dB = 2.0 Watts min. at 900 MHz • Omnigold™ Metalization System B G F E H #8-32U NC MAXIMUM RATINGS IC VCBO VCER VEBO PDISS TJ TSTG θJC 0.5 A 55 V 30 V 4.0 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 C/W ° D IM A B C D E F G H I J .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100 M IN IM U M inches / m m J M AX IM U M inches / m m .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800 .196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200 1 = Collector 2 = Emitter 3 = Base CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 5.0 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 24 V POUT = 2.0 V IC = 100 mA f = 1.0 MHz f = 900 MHz MINIMUM TYPICAL MAXIMUM 30 55 4.0 500 10 100 2.0 9.0 55 UNITS V V V µA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1