MRF894

MRF894 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF894 is agold metalized epitaxial silicon NPN transistor, using diffused ballast resistors for high linearity Calss-AB operation for cellular base station application. PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I JK L F C B 2 XØ.130 FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 30 W/960 MHz • Omnigold™ Metalization System • ηC = 55 % Typ. • = Load mismatch capability 20:1 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 7.5 A 48V 25 V 3.5 V 88 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.0 °C/W DIM A B C D E F G H I J K L M INIMUM inches / mm MAXIMUM inches / mm .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO ICBO hFE COB PG IMD3 ηC IC = 40 mA IC = 40 mA IE = 10 mA VCE = 24 V VCE = 20 V VCB = 25 V TC = 25 °C NONETEST CONDITIONS IC = 100 Ma RBE = 150 Ω MINIMUM TYPICAL MAXIMUM 48 30 25 3.5 10 15 55 40 28 5.0 --40 42 7.5 9.0 -35 55 ----------100 50 --- UNITS V V V mA --pF dB dBc % IC = 2.0 A f = 1.0 MHz ICQ = 60 mA f1 = 860.0 MHz f = 860 MHz f2 = 860.1 MHz VCE = 25 V POUT = 30 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1