MRF951V3

MRF951V3 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF951V3 is Designed for high gain. Low noise small-signal amplifiers applications up to 2.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 100 mA 20 V 10 V 1.5 V 1.0 W @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 100 °C/W Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS SYMBOL BVCBO BVCEO ICBO IEBO hFE Ccb GNF NF50Ω TC = 25 °C NONETEST CONDITIONS IC = 0.1 mA IC = 0.1 mA VCB = 10 V VEB = 1.0 V VCE = 6.0 V VCB = 10 V VCE = 6.0 V VCE = 6.0 V IC = 5.0 mA IC = 5.0 mA IC = 5.0 mA f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 20 10 0.1 0.1 50 0.45 14 9.0 1.9 2.8 200 UNITS V V µA µA --pF dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1