MRF962
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF962 is designed for Low-to-medium power amplifier applications, requiring high gain, low noise figure, and low intermodulation distortion.
PACKAGE STYLE
FEATURES:
• NF = 2.0 dB • Omnigold™ Metalization System • Hermetic stripline, ceramic package
DIM A C D F G K
MILLIMETER S MIN MAX 2.29 2.67 0.89 1.40 0.41 0.61 0.89 1.09 0.08 0.15 4.45 5.84
INCHES MIN MAX 0.090 0.105 0.035 0.055 0.016 0.024 0.035 0.043 0.003 0.006 0.175 0.230
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 100 mA 20 V .75 W @ TC = 100 °C -65 °C to +200 °C -65 °C to +150 °C 133 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICBO hFE CCB ft NF
TC = 25 °C
NONETEST CONDITIONS
IC = 1.0 mA IC = 100 µA IE = 100 µA VCB = 10 V VCE = 10 V VCB = 10 V VCE = 10 V VCE = 10 V IC = 50 mA IC = 10 mA IC = 50 mA f = 1.0 MHz f = 0.5 GHz f = 0.5 GHz
MINIMUM TYPICAL MAXIMUM
15 20 3.0 100 30 1.2 4.5 2.0 200 1.5
UNITS
V V V nA --pF GHz dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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