MRF962_07

MRF962 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF962 is designed for Low-to-medium power amplifier applications, requiring high gain, low noise figure, and low intermodulation distortion. PACKAGE STYLE FEATURES: • NF = 2.0 dB • Omnigold™ Metalization System • Hermetic stripline, ceramic package DIM A C D F G K MILLIMETER S MIN MAX 2.29 2.67 0.89 1.40 0.41 0.61 0.89 1.09 0.08 0.15 4.45 5.84 INCHES MIN MAX 0.090 0.105 0.035 0.055 0.016 0.024 0.035 0.043 0.003 0.006 0.175 0.230 MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 100 mA 20 V .75 W @ TC = 100 °C -65 °C to +200 °C -65 °C to +150 °C 133 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE CCB ft NF TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 100 µA IE = 100 µA VCB = 10 V VCE = 10 V VCB = 10 V VCE = 10 V VCE = 10 V IC = 50 mA IC = 10 mA IC = 50 mA f = 1.0 MHz f = 0.5 GHz f = 0.5 GHz MINIMUM TYPICAL MAXIMUM 15 20 3.0 100 30 1.2 4.5 2.0 200 1.5 UNITS V V V nA --pF GHz dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1