MRW53601

MRW53601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRW53601 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. PACKAGE STYLE HLP-1 Dim: A B C D E F H J K N Q U Millimeters Min Max 0.790 0.810 0.240 0.260 0.144 0.170 0.115 0.125 0.055 0.065 0.045 0.055 0.115 0.135 0.003 0.006 0.225 0.275 0.220 0.240 0.125 0.135 0.552 0.572 Inches Min 20.07 6.10 3.66 2.93 1.40 1.15 2.93 0.08 5.72 5.59 3.18 14.03 Max 20.57 6.60 4.31 3.17 1.65 1.39 3.42 0.15 6.98 6.09 3.42 14.52 MAXIMUM RATINGS I V TJ TSTG θJC O O 250 mA 22 V -65 C to +200 C -65 C to +200 C 40 C/W O O O 1 = Base 2 = Collector 3 = Emitter NONE CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO ICBO BVEBO hFE ft Cob GPE LG IC = 10 mA IC = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 22 50 45 250 3.5 UNITS V V V µA V --GHz IC = 1.0 mA VCB = 28 V IE = 250 µA VCE = 5.0 V VCE = 20 V VCB = 28 V VCE = 20 V f = 2.0 GHz ICQ = 120 mA IC = 100 mA IE = 120 mA f = 1.0 MHz Pout = 0.5 W 20 3.0 120 3.5 10 -0.2/+1.0 pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1