MRW54001

MRW54001 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI MRW54001 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold™ Metalization System • Implanted ballast resistors • Common-Emitter MAXIMUM RATINGS I VCEO VCES TJ TSTG θJC 160 mA 22 V 50 V -65 °C to +200 °C -65 °C to +200 °C 40 °C/W UNIT mm inches 1 = Collector b 1.63 1.38 0.065 0.055 B1 0.81 0.71 0.032 0.028 3 = Base c 0.16 0.10 0.006 0.004 2 & 4 = Emitter D 3.38 3.08 0.133 0.121 D1 5.28 5.12 0.208 0.202 D2 5.23 5.13 0.206 0.202 H 19 17 0.75 0.67 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO hFE ft Cob GPE LG IC = 10 mA IC = 10 mA TC = 25 °C NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 22 50 45 3.5 250 UNITS V V V V µA --GHz IC = 1.0 mA IE = 250 µA VCB = 28 V VCE = 5.0 V VCE = 20 V VCB = 28 V VCE = 20 V f = 2.0 GHz ICQ = 120 mA IC = 100 mA IE = 120 mA f = 1.0 MHz Pout = 0.5 W 20 4.0 4.5 120 3.5 10 -0.2/+1.0 pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1