MS175H

MS175H NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The MS175H is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC VCE PDISS TJ TSTG 100 mA (PEAK) 15 V 300 mW @ TC = 25 C O 200 mW @ TA = 25 C -65 C to +200 C -65 C to +200 C O O O O O 1 = EMITTER 3 = COLLECTOR 2 = BASE 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Po η TC = 25 C O NONE TEST CONDITIONS IC = 5.0 mA IC = 10 µA VCB = 20 V TA = 150 C IE = 1.0 µA VCE = 1.0 V IC = 20 mA IC = 20 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.5 V VCE = 6.0 V VCB = 10 V IC = 1.5 mA IE = 12 mA IC = 5.0 mA IB = 2.0 mA IB = 2.0 mA IC = 5.0 mA f = 100 MHz f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz f = 200 MHz f = 500 MHz O MINIMUM TYPICAL MAXIMUM 15 30 0.01 1.0 2.0 40 150 0.8 1.0 1500 3.0 1.0 3.0 3.5 15 30 25 4.5 UNITS V V µA V --V V MHz pF pF dB mW % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1