MS2608

MS2608 NPN SILICON RF MICROWAVE TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI MS2608 is Designed for pulsed SBand radar applications from 2.7 to 3.1 GHz. B D C L N J A O 1 2 4 M P Ø.120 3 E K .062 x 45° FEATURES: • Internal Input/Output Matching Network • PG = 6.0 dB at 12 W/2.7-3.1 GHz • Omnigold™ Metalization System F H D IM A B C D G I Q R M IN IM U M inches / m m M AXIM U M inches / m m .140 / 3.56 .110 / 2.80 .110 / 2.80 .395 / 10.03 .193 / 4.90 .230 / 5.84 .003 / 0.08 .118 / 3.00 .063 / 1.60 .650 / 16.51 .386 / 9.80 .900 / 22.86 .450 / 11.43 .125 / 3.18 .050 / 1.27 .405 / 10.29 .170 / 4.32 .062 / 1.58 .006 / 0.15 .131 / 3.33 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 2.0 A 46 V 50 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 4.0 ° C/W O E F G H I J K L M N O P Q R 1 = COLLECTOR 2&3 = BASE 4 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC TC = 25 °C NONETEST CONDITIONS IC = 7.0 mA IC = 7.0 mA IE = 1.0 mA VCE = 40 V VCE = 5.0 V VCC = 40 V IC = 600 mA POUT = 12 W f = 2.7 to 3.1 GHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 55 3.5 5.0 30 6.0 30 150 UNITS V V V mA --dB % Note: Pulse Widht = 100 µS Duty Cycle = 10 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1