MSC1004M

MSC1004M NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MSC1004M is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. PACKAGE STYLE .250 SQ 2L FL 2 3 1 FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC O O 650 mA 32 V 18 W @ TC ≤ 100 C O O O -65 C to +200 C -65 C to +150 C 5.0 C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE O CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG POUT η TC = 25 C O TEST CONDITIONS IC = 1.0 mA IC = 25 mA IE = 1.0 mA VCE = 28 V VCE = 5.0 V VCE = 28 V IC = 200 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 30 9.0 4.0 35 300 UNITS V V mA PIN = 500 mW PULSE WIDTH = 10 µS dB W % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1