MSC1090M

MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. PACKAGE STYLE .250 2L FLG(B) A .100 X 45° ØD 1 4 2 E F .088 x 45° CHAMFER C B 3 FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System G H K I J DIM A B MINIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 250 mA 50 V 290 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.60 °C/W C D E F G H I J K .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 50 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 6.3 UNITS V V V mA --dB % VCE = 5.0 V VCC = 50 V PIN = 13 W IC = 100 mA POUT = 90 W f = 1025 - 1150 MHz 5 8.4 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1