MSC1300M

MSC1300M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC1300M is a high power Class C, common Base transistor, Designed for IFF/DME/TACAN Applications. PACKAGE STYLE .400 2NL FLG A .0 2 5 x 4 5 ° 2X B C F ØD E 4 x .0 6 2 x 4 5 ° FEATURES: • Internal Input/Output Matching Networks • PG = 6.3 dB at 300 W/1090 MHz • Omnigold™ Metalization System D IM A G H I J K P M M IN IM U M inches / m m L N M A X IM U M inches / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 . 4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0 .0 3 0 / 0 .7 6 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 20 A 55 V 625 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 0.20 °C/W B C D E F G H I J K L M N P .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4 .6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 .4 1 5 / 1 0 .5 4 .0 0 7 / 0 .1 8 .0 7 2 / 1 .8 3 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE GP ηC IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 50 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 25 UNITS v V V mA --dB % IC = 1.0 A POUT = 300 W f = 1090 MHz 15 6.3 35 6.7 42 120 Pulse Width = 10 µsec, Duty Cycle 10 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1