MSC80196

MSC80196 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80196 is Designed for Class A Linear Applications up to 2.0 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • Class A Operation • PG = 7.0 dB at 1.0 W/2.0 GHz • Omnigold™ Metalization System DIM A L G H J F I K M NP M INIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 500 mA 20 V 10 W -65 °C to +200 °C -65 °C to +200 °C 17.0 °C/W B C D E F G H I J K L M N P .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 COMMON EMITTER CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO hFE COB PG TC = 25°C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 18 V VCE = 5.0 V VCB = 28 V VCE = 18 V ICQ = 220 mA POUT = 1.0 W IC = 1.0 A f = 1.0 MHz f = 2.0 GHz MINIMUM TYPICAL MAXIMUM 50 20 3.5 1.0 15 120 5.0 7.0 UNITS V V V mA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1