MSC80914

MSC80914 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80914 is Designed for Class C, Common Base General Purpose Applications to 2.3 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES INCLUDE: • Gold Metalization • Site Emitter Ballasting L G H J F I K M NP MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC O O DIM A B C D E F MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 200 mA 35 V 7.0 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 20 C/W O O O O .255 / 6.48 .132 / 3.35 .117 / 2.97 G H I J K L M N P .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob Pout PG ηC IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V TC = 25 C O TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 0.5 UNITS V V V mA --pF W dB % IC = 100 mA f = 1.0 MHz 15 3.0 1.0 7.0 35 1.25 8.0 40 150 3.5 VCC = 28 V Pin = 200 mW fo = 2.0 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1