MSC81035M

MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG (B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: F E G H J K • Input matching • Emitter site Ballasted. • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System I DIM A B M INIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 3.0 A 55 V 150 W @ TC ≤ 100 °C -65 °C to +250 °C -65 °C to +150 °C 1.0 ° C/W O C D E F G H I J K .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 5.0 UNITS V V V mA --dB % IC = 500 mA POUT = 35 W f = 1025-1150 MHz 15 10.7 43 11.2 48 120 VCC = 50 V PIN = 3.0 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1