MSC81038

MSC81058 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81058 is Designed for General Purpose Class C Power Amplifier Applications up to 1.2 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • PG = 10 dB min. at 10 W/ 1.0 GHz • Hermetic Microstrip Package • Omnigold™ Metalization System • Emitter Ballasted G L H J F I K M NP DIM A B MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 1.0 A 35 V 29 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 8.5 °C/W C D E F G H I J K L M N P CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG ηC IC = 10 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 2.5 UNITS V V V mA --pF dB % IC = 500 mA f = 1.0 MHz POUT = 10 W f = 1.0 GHz 15 120 10 10 60 11 64 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1