MSC81090

MSC81090 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. PACKAGE STYLE .230 4L STUD FEATURES: • PG = 10 dB min. at 2.0 W/ 1.0 GHz • Hermetically sealed Package • Omnigold™ Metalization System • Emitter Ballasted MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 200 A 35 V 6.25 W @ TC ≤ 75 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W COMMON EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob POUT ηC GP TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 18 V VCE = 18 V PIN = 0.2 W IC = 100 mA f = 1.0 MHz f = 1.0 GHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 0.5 15 120 3.2 2.0 50 10 2.2 55 10.4 UNITS V V V mA --pF W % dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1