MSC81111

MSC81111 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC81111 is Designed for Class "C" Amplifier Applicatioons from 0.4 to 1.2 GHz, Supplied in Common Base Package. PACKAGE STYLE HLP-1 Dim: A B C D E F H J K N Q U Inches Min 0.790 0.225 0.144 0.115 0.055 0.045 0.115 0.003 0.225 0.220 0.125 0.552 Max 0.810 0.235 0.180 0.125 0.065 0.055 0.135 0.006 0.275 0.240 0.135 0.572 Millimeters Min Max 20.07 20.6 5.72 5.97 3.66 4.58 2.93 3.17 1.40 1.65 1.15 1.39 2.93 3.42 0.08 0.15 5.72 6.98 5.59 6.09 3.18 3.42 14.03 14.5 MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 600 mA 35 V 21.8 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 8 C/W O O O O O O 1 = Emitter 2 = Collector 3 = Base NONE CHARACTERISTICS SYMBOL BVCER BVCBO ICBO BVEBO hFE COB Pout ηC GP IC = 5.0 mA IC = 1.0 mA VCB = 28 V IE = 1.0 mA VCE = 5.0 V VCB = 28 V TC = 25 C O TEST CONDITIONS RBE = 10Ω MINIMUM TYPICAL MAXIMUM 45 45 1.0 3.5 UNITS V V mA V --pF W % dB IC = 200 mA f = 1.0 MHz 15 120 6.5 VCC = 28 V Pin = 500 mW f = 1.0 GHz 5.0 50 10 6.6 52 11.2 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1