NE02103

NE02103 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI NE02103 is Designed for Oscillator and Amplifier Applications up to 2.0 GHz. PACKAGE STYLE .100 4LPILL FEATURES INCLUDE: • High insertion gain, 18.5 dB at 500 MHz. • High power gain, 1.5 dB at 500 MHz. • Low noise figure, 12 dB at 2 GHz. • For JAN level add sufix D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 70 mA 25 V 12 V 3.0 V 350 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 70 °C/W 1 = BASE 2&4 = EMITTER 3 = COLLECTOR CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft ⏐S21⏐2 VCE = 10 V VCE = 10 V VCB = 15 V VEB = 2.0 V VCE = 10 V VCB = 10 V VCE = 10 V VCE = 10 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 1.0 1.0 UNITS µA µA --pF GHz dB IC = 20 mA f = 1.0 MHz IC = 20 mA IC = 20 mA f = 1.0 GHz f = 0.5 GHz f = 1.0 GHz f = 2.0 GHz 20 0.6 4.5 18.5 13 5.5 6.5 1.5 2.7 250 1.0 NFMIN IC = 3.0 mA IC = 5.0 mA f = 0.5 GHz f = 2.0 GHz 4.5 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1