OSC-2.0SM_07

OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W PACKAGE STYLE .230 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: L G H J F I K M NP • POUT = 2.0 tTyp. @ 2.5 GHz • Common Collector • Low thermal resistance • Omnigold™ Metalization System DIM A B C M INIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 MAXIMUM RATINGS IC VCBO VCEO VEBO TJ TSTG θJC 640 mA 45 V 22 V 3.5 V -65 °C to +200 °C -65 °C to +200 °C 7.0 °C/W D E F G H I J K L M N P .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 ORDER CODE: ASI10639 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 2.0 mA IC = 40.0 mA IE = 0.5 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCC = 21 V POUT = 2.5 W ICQ = 300 mA IC = 200 mA f = 1.0 MHz f = 2.0 GHz MINIMUM TYPICAL MAXIMUM 45 22 3.5 640 20 7 4.5 30 120 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 1/2 ERROR! REFERENCE SOURCE NOT FOUND. OSC-2.0SM A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. E 2/2