SD1127

SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. PACKAGE STYLE TO-39 MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 0.64A 36 V 18 V 8 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 21.9 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO HFE COB GPE η IC = 10 mA IC = 5 mA TC = 25 °C TRANS1.SYM TEST CONDITIONS MINIMUM 18 36 4.0 TYPICAL MAXIMUM UNITS V V V IC = 1.0 mA VCE = 15 V VCE = 5.0 V VCE = 15 V VCE = 12.5 V VCE = 12.5 V VCC = 12.6 V PPUT = 4.0 W PIN = 0.2 W PIN = 0.2 W PIN = 0.2 W IC = 50 mA f = 1.0 MHz f = 175 MHz f = 175 MHz f = 136 MHZ f = 155 MHZ f = 175 MHZ .25 10 100 20 12 mA --pf dB ZIN = 3.0 – j3.8 ZIN = 4.0 – j2.0 ZIN = 4.3 – j5.8 ZCL = 12.8 – j11 ZCL = 11 – j14.8 ZCL = 13 – j20 Ω IMPEDANCE VCC = 12.6 V VCC = 12.6 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1