SD1169

SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 6A 36 V 80 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 2.2 OC/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CEO BV CEO BV EBO ICBO hFE COB GPE ηC IC = 100mA IC = 50mA IE = 10mA VCB = 15 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 18 36 4.0 5 UNITS V V V mA --- VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V IC = 1.0 A f = 1.0 MHz POUT = 40 W f = 88 MHz 5 200 6.0 7.5 65 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1